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Samsung M3 78T3354BZ0-CCC 256MB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Overall score
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
  • Below the latency in the PassMark tests, ns
    46 left arrow 52
    Around 12% lower latency
  • Faster reading speed, GB/s
    2 left arrow 10
    Average value in the tests
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB Reasons to consider
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Report a bug
  • Faster write speed, GB/s
    7.6 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 3200
    Around 6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 52
  • Read speed, GB/s
    2,909.8 left arrow 10.0
  • Write speed, GB/s
    1,519.2 left arrow 7.6
  • Memory bandwidth, mbps
    3200 left arrow 19200
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 2169

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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