Samsung M3 78T3354BZ0-CCC 256MB vs Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 52

左右 12% 更低的延时
更快的读取速度，GB/s

2 10

测试中的平均数值

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

需要考虑的原因
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

报告一个错误

更快的写入速度，GB/s

7.6 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 52
读取速度，GB/s

2,909.8 10.0
写入速度，GB/s

1,519.2 7.6
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2169

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Ramaxel Technology RMSA3270MB76H8F2400 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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V-GEN D4S4GL32A16TS 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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Crucial Technology BLS4G4D26BFSB.8FE 4GB

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Kingston KKRVFX-MIE 8GB

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A-DATA Technology VDQVE1B16 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB