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Samsung M3 78T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Samsung M3 78T3354BZ0-CCC 256MB vs Kreton Corporation 51621xxxx68x35xxxx 2GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Kreton Corporation 51621xxxx68x35xxxx 2GB

Kreton Corporation 51621xxxx68x35xxxx 2GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 55
    左右 16% 更低的延时
Kreton Corporation 51621xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51621xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    1,810.5 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    5300 left arrow 3200
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    46 left arrow 55
  • 读取速度，GB/s
    2,909.8 left arrow 4,801.5
  • 写入速度，GB/s
    1,519.2 left arrow 1,810.5
  • 内存带宽，mbps
    3200 left arrow 5300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 5-5-5-15 / 667 MHz
  • 排名PassMark (越多越好)
    241 left arrow 829

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB

Kreton Corporation 51621xxxx68x35xxxx 2GB RAM的比较

Micron Technology 16ATF4G64HZ-3G2B2 32GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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Kingston 9965525-018.A00LF 4GB
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内存RAM