RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Mushkin 99[2/7/4]183 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Mushkin 99[2/7/4]183 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Mushkin 99[2/7/4]183 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
15
Average value in the tests
Reasons to consider
Mushkin 99[2/7/4]183 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
46
Around -70% lower latency
Faster write speed, GB/s
11.6
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Mushkin 99[2/7/4]183 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
27
Read speed, GB/s
2,909.8
15.0
Write speed, GB/s
1,519.2
11.6
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2809
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Mushkin 99[2/7/4]183 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Mushkin 99[2/7/4]183 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Kingston 99U5471-056.A00LF 8GB
Smart Modular SMS4WEC8C1K0446FCG 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
V-GEN D4H4GL26A8TS5 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KHX3200C18D4/4G 4GB
Samsung M395T5160QZ4-CE66 2GB
Corsair CMW32GX4M4Z3200C16 8GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M378A2K43CB1-CRC 16GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston M378A1K43CB2-CRC 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M386A4G40DM0-CPB 32GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
Kingston KHX2133C14/8G 8GB
Apacer Technology 78.01G86.9H50C 1GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
Report a bug
×
Bug description
Source link