RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
13
Average value in the tests
Reasons to consider
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
46
Around -70% lower latency
Faster write speed, GB/s
10.4
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
27
Read speed, GB/s
2,909.8
13.0
Write speed, GB/s
1,519.2
10.4
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2594
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT32G4SFD832A.C16FB 32GB
Samsung M471A4G43AB1-CWE 32GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-2133C15-8GSQ 8GB
Samsung M393B5170FH0-CK0 4GB
Samsung M391A1G43EB1-CPB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Avant Technology F6451U64F9333G 4GB
Micron Technology 16GB 2133MHz DIMM 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3333C16-8GTZSK 8GB
Kingston 99U5403-492.A00LF 8GB
Kingston KF3200C20S4/16G 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMU32GX4M2D3200C16 16GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMW32GX4M2C3333C16 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 99U5713-003.A00G 4GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-4400C19-16GTZR 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston K000MD44U 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Report a bug
×
Bug description
Source link