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Samsung M3 78T5663EH3-CF7 2GB
G Skill Intl F4-2400C17-4GVR 4GB

Samsung M3 78T5663EH3-CF7 2GB vs G Skill Intl F4-2400C17-4GVR 4GB

Overall score
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Overall score
star star star star star
G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

Differences Specifications Comments

Differences

Samsung M3 78T5663EH3-CF7 2GB Reasons to consider
Samsung M3 78T5663EH3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 15.2
    Average value in the tests
  • Faster write speed, GB/s
    2,451.8 left arrow 12.0
    Average value in the tests
G Skill Intl F4-2400C17-4GVR 4GB Reasons to consider
G Skill Intl F4-2400C17-4GVR 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 65
    Around -160% lower latency
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663EH3-CF7 2GB
G Skill Intl F4-2400C17-4GVR 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 25
  • Read speed, GB/s
    4,605.9 left arrow 15.2
  • Write speed, GB/s
    2,451.8 left arrow 12.0
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    878 left arrow 2740

Samsung M3 78T5663EH3-CF7 2GB RAM comparisons

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB

G Skill Intl F4-2400C17-4GVR 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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