RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4266C19-8GTZR 8GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-4266C19-8GTZR 8GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
G Skill Intl F4-4266C19-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
19.4
Average value in the tests
Faster write speed, GB/s
2,168.2
16.3
Average value in the tests
Reasons to consider
G Skill Intl F4-4266C19-8GTZR 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
60
Around -122% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4266C19-8GTZR 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
27
Read speed, GB/s
4,595.2
19.4
Write speed, GB/s
2,168.2
16.3
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
941
3827
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
G Skill Intl F4-4266C19-8GTZR 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4266C19-8GTZR 8GB
Crucial Technology CT102464BF160B-16F 8GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Kingston 99P5474-014.A00LF 4GB
Samsung M392A4K40BM0-CRC 32GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C16-4GVRB 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Shenzhen Technology Co Ltd 8GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3200C16-16GTRS 16GB
Samsung M471B5173QH0-YK0 4GB
Avant Technology J641GU42J7240N3 8GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMU32GX4M2C3000C15 16GB
Report a bug
×
Bug description
Source link