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Samsung M3 78T5663RZ3-CF7 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs Lexar Co Limited LD4AU016G-H3200GST 16GB

Overall score
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Overall score
star star star star star
Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CF7 2GB Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 17.8
    Average value in the tests
  • Faster write speed, GB/s
    2,784.6 left arrow 12.5
    Average value in the tests
Lexar Co Limited LD4AU016G-H3200GST 16GB Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 65
    Around -97% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 33
  • Read speed, GB/s
    4,806.8 left arrow 17.8
  • Write speed, GB/s
    2,784.6 left arrow 12.5
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    932 left arrow 3285

Samsung M3 78T5663RZ3-CF7 2GB RAM comparisons

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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