Samsung M3 78T5663RZ3-CF7 2GB vs Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.8

测试中的平均数值
更快的写入速度，GB/s

2,784.6 12.5

测试中的平均数值

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 65

左右 -97% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 33
读取速度，GB/s

4,806.8 17.8
写入速度，GB/s

2,784.6 12.5
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

932 3285

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Absolute Latency

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最新比较

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Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BL8G30C15U4BL.M8FE1 8GB

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Kingston 9965525-010.A00LF 4GB

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Crucial Technology CT8G4DFS8213.C8FDR1 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB