RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Compare
Samsung M3 78T5663RZ3-CF7 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Overall score
Samsung M3 78T5663RZ3-CF7 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
18.7
Average value in the tests
Faster write speed, GB/s
2,784.6
14.2
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
65
Around -242% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
19
Read speed, GB/s
4,806.8
18.7
Write speed, GB/s
2,784.6
14.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
932
3220
Samsung M3 78T5663RZ3-CF7 2GB RAM comparisons
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB RAM comparisons
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
A-DATA Technology DDR2 800G 2GB
Kingston X74R9W-MIE 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Samsung M471B5673FH0-CF8 2GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4400C17-16GTZR 16GB
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-5600U3636C16G 16GB
Apacer Technology 78.01G86.9H50C 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Kingston 9965525-140.A00LF 8GB
Corsair CMK16GX4M2A2400C16 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2666C15-4GRR 4GB
Report a bug
×
Bug description
Source link