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Samsung M3 78T6553EZS-CF7 512MB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Compare
Samsung M3 78T6553EZS-CF7 512MB vs SK Hynix HMAA1GU6CJR6N-XN 8GB
Overall score
Samsung M3 78T6553EZS-CF7 512MB
Overall score
SK Hynix HMAA1GU6CJR6N-XN 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T6553EZS-CF7 512MB
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Faster reading speed, GB/s
3
16.7
Average value in the tests
Faster write speed, GB/s
2,021.5
10.6
Average value in the tests
Reasons to consider
SK Hynix HMAA1GU6CJR6N-XN 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
47
Around -38% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T6553EZS-CF7 512MB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
47
34
Read speed, GB/s
3,575.4
16.7
Write speed, GB/s
2,021.5
10.6
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
563
2789
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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