RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology J642GU42J5213N4 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Avant Technology J642GU42J5213N4 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Avant Technology J642GU42J5213N4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
13.6
Average value in the tests
Faster write speed, GB/s
2,622.0
11.3
Average value in the tests
Reasons to consider
Avant Technology J642GU42J5213N4 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
77
Around -108% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology J642GU42J5213N4 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
37
Read speed, GB/s
3,405.2
13.6
Write speed, GB/s
2,622.0
11.3
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
2656
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Avant Technology J642GU42J5213N4 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Avant Technology J642GU42J5213N4 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Kingston 9905702-007.A00G 8GB
Kingston K531R8-MIN 4GB
INTENSO 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4DFD8213.C16FBR2 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905598-009.A00G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-4400C16-8GTRS 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C19-8GSXK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G30C15U4B.8FE 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMW32GX4M4Z2933C16 8GB
Mushkin 996902 2GB
G Skill Intl F4-3800C14-16GTZN 16GB
Samsung M471B1G73BH0-YK0 8GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
PNY Electronics PNY 2GB
Kingston KHX2933C15D4/8GX 8GB
Report a bug
×
Bug description
Source link