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Samsung M3 93T5750CZA-CE6 2GB
takeMS International AG TMS2GB264D082805EQ 2GB

Samsung M3 93T5750CZA-CE6 2GB vs takeMS International AG TMS2GB264D082805EQ 2GB

Overall score
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score
star star star star star
takeMS International AG TMS2GB264D082805EQ 2GB

takeMS International AG TMS2GB264D082805EQ 2GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
  • Faster write speed, GB/s
    2,622.0 left arrow 2,594.1
    Average value in the tests
takeMS International AG TMS2GB264D082805EQ 2GB Reasons to consider
takeMS International AG TMS2GB264D082805EQ 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    46 left arrow 77
    Around -67% lower latency
  • Faster reading speed, GB/s
    5 left arrow 3
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
takeMS International AG TMS2GB264D082805EQ 2GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    77 left arrow 46
  • Read speed, GB/s
    3,405.2 left arrow 5,520.9
  • Write speed, GB/s
    2,622.0 left arrow 2,594.1
  • Memory bandwidth, mbps
    5300 left arrow 6400
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    763 left arrow 878

Samsung M3 93T5750CZA-CE6 2GB RAM comparisons

Southland Microsystems 40002105-01 2GB

takeMS International AG TMS2GB264D082805EQ 2GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Samsung M3 93T5750CZA-CE6 2GB
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takeMS International AG TMS2GB264D082805EQ 2GB
takeMS International AG TMS2GB264D082805EQ 2GB
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