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Samsung M3 93T5750CZA-CE6 2GB
takeMS International AG TMS2GB264D082805EQ 2GB

Samsung M3 93T5750CZA-CE6 2GB vs takeMS International AG TMS2GB264D082805EQ 2GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
takeMS International AG TMS2GB264D082805EQ 2GB

takeMS International AG TMS2GB264D082805EQ 2GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的写入速度，GB/s
    2,622.0 left arrow 2,594.1
    测试中的平均数值
takeMS International AG TMS2GB264D082805EQ 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082805EQ 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 77
    左右 -67% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 3
    测试中的平均数值
  • 更高的内存带宽，mbps
    6400 left arrow 5300
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
takeMS International AG TMS2GB264D082805EQ 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    77 left arrow 46
  • 读取速度，GB/s
    3,405.2 left arrow 5,520.9
  • 写入速度，GB/s
    2,622.0 left arrow 2,594.1
  • 内存带宽，mbps
    5300 left arrow 6400
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    763 left arrow 878

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

Southland Microsystems 40002105-01 2GB

takeMS International AG TMS2GB264D082805EQ 2GB RAM的比较

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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