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Samsung M3 93T5750CZA-CE6 2GB
Southland Microsystems 40002105-01 2GB

Samsung M3 93T5750CZA-CE6 2GB vs Southland Microsystems 40002105-01 2GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Southland Microsystems 40002105-01 2GB

Southland Microsystems 40002105-01 2GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的写入速度，GB/s
    2,622.0 left arrow 1,937.9
    测试中的平均数值
Southland Microsystems 40002105-01 2GB 需要考虑的原因
Southland Microsystems 40002105-01 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 77
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Southland Microsystems 40002105-01 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    77 left arrow 52
  • 读取速度，GB/s
    3,405.2 left arrow 4,539.0
  • 写入速度，GB/s
    2,622.0 left arrow 1,937.9
  • 内存带宽，mbps
    5300 left arrow 5300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 4 5
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 667 MHz
  • 排名PassMark (越多越好)
    763 left arrow 692

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB

Southland Microsystems 40002105-01 2GB RAM的比较

Corsair CMD16GX4M2B2400C10 8GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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内存RAM
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