Samsung M3 93T5750CZA-CE6 2GB vs Southland Microsystems 40002105-01 2GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Southland Microsystems 40002105-01 2GB

Southland Microsystems 40002105-01 2GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的写入速度，GB/s

2,622.0 1,937.9

测试中的平均数值

Southland Microsystems 40002105-01 2GB

需要考虑的原因
Southland Microsystems 40002105-01 2GB

报告一个错误

低于PassMark测试中的延时，ns

52 77

左右 -48% 更低的延时
更快的读取速度，GB/s

4 3

测试中的平均数值

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Southland Microsystems 40002105-01 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

77 52
读取速度，GB/s

3,405.2 4,539.0
写入速度，GB/s

2,622.0 1,937.9
内存带宽，mbps

5300 5300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

763 692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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