TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BL16G32C16S4B.M8FB1 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.2

测试中的平均数值

Crucial Technology BL16G32C16S4B.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16S4B.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 53

左右 -83% 更低的延时
更快的写入速度，GB/s

14.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 29
读取速度，GB/s

3,726.4 17.2
写入速度，GB/s

1,590.1 14.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 3461

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BL16G32C16S4B.M8FB1 16GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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Samsung M471A2K43CB1-CRCR 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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Crucial Technology CT16G4SFD8266.M16FRS 16GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N