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Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-2800C15-4GTZ 4GB
比较
Samsung M471B5773DH0-CH9 2GB vs G Skill Intl F4-2800C15-4GTZ 4GB
总分
Samsung M471B5773DH0-CH9 2GB
总分
G Skill Intl F4-2800C15-4GTZ 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
G Skill Intl F4-2800C15-4GTZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
21
43
左右 -105% 更低的延时
更快的读取速度,GB/s
18
11
测试中的平均数值
更快的写入速度,GB/s
13.5
7.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-2800C15-4GTZ 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
43
21
读取速度,GB/s
11.0
18.0
写入速度,GB/s
7.2
13.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1393
2769
Samsung M471B5773DH0-CH9 2GB RAM的比较
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-2800C15-4GTZ 4GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Kingston 9905471-002.A00LF 2GB
Golden Empire CL15-15-15 D4-2666 4GB
Crucial Technology CT51264BF160B.C16F 4GB
Kingston MSI16D3LS1KBG/4G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905624-033.A00G 8GB
Samsung M391B5673EH1-CH9 2GB
Essencore Limited KD44GU480-26N160T 4GB
Kingston 99U5428-063.A00LF 8GB
Kingston KHX426C13/8G 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK16GX4M2B3466C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA41GR7AFR4N-TF 8GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology ITC 4GB
Samsung 1600 CL10 Series 8GB
Kingston 9905630-033.A00G 16GB
报告一个错误
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Bug description
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