Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB vs Patriot Memory (PDP Systems) PSD34G16002 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

差异

  • 低于PassMark测试中的延时,ns
    29 left arrow 39
    左右 26% 更低的延时
  • 更快的读取速度,GB/s
    14.7 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度,GB/s
    9.2 left arrow 6.9
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT451U6AFR8A-PB 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    29 left arrow 39
  • 读取速度,GB/s
    12.2 left arrow 14.7
  • 写入速度,GB/s
    6.9 left arrow 9.2
  • 内存带宽,mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2046 left arrow 2322
RAM Latency Calculator
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最新比较