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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT8G4DFRA266.M4FE 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology CT8G4DFRA266.M4FE 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
33
左右 12% 更低的延时
需要考虑的原因
Crucial Technology CT8G4DFRA266.M4FE 8GB
报告一个错误
更快的读取速度,GB/s
19.8
16.9
测试中的平均数值
更快的写入速度,GB/s
13.6
12.0
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
33
读取速度,GB/s
16.9
19.8
写入速度,GB/s
12.0
13.6
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2601
3364
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB RAM的比较
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hexon Technology Pte Ltd HEXON 1GB
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Samsung M393A1G40DB0-CPB 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C16-16GTZR 16GB
Samsung M378A1K43EB2-CWE 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
报告一个错误
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Bug description
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