Samsung M378A1K43EB2-CWE 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 56

左右 41% 更低的延时
更快的写入速度，GB/s

12.0 10.5

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的读取速度，GB/s

20.1 17.6

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 56
读取速度，GB/s

17.6 20.1
写入速度，GB/s

12.0 10.5
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2910 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMWX8GD3200C16W4 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 99U5704-001.A00G 4GB

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Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Samsung M378A2G43MB1-CTD 16GB

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A-DATA Technology VDQVE1B16 2GB

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SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-3400C16-8GTZKW 8GB

G Skill Intl F4-3400C16-8GTZKW 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMK16GX4M4C3200C16 4GB

Corsair CMK16GX4M4C3200C16 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

EVGA 8GX-D4-3200-MR 8GB

EVGA 8GX-D4-3200-MR 8GB