RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston 9905403-061.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9905403-061.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 57
    左右 -138% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 24
  • 读取速度，GB/s
    6.8 left arrow 16.0
  • 写入速度，GB/s
    5.5 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 2925

Kingston 9905403-061.A00LF 2GB RAM的比较

Corsair CMX8GX3M1A1600C11 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
AMD R748G2133U2S-UO 8GB
AMD R748G2133U2S-UO 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 9965589-006.E00G 8GB
Kingston 9965589-006.E00G 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Teikon TMA851U6CJR6N-VKSC 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Kingston 9905700-047.A00G 16GB
Kingston 9905700-047.A00G 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 9965589-005.A01G 8GB
Kingston 9965589-005.A01G 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Corsair CMT32GX4M2C3200C16 16GB
Corsair CMT32GX4M2C3200C16 16GB
内存RAM