Kingston 9905403-061.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9905403-061.A00LF 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 57

左右 -138% 更低的延时
更快的读取速度，GB/s

16 6.8

测试中的平均数值
更快的写入速度，GB/s

12.5 5.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 24
读取速度，GB/s

6.8 16.0
写入速度，GB/s

5.5 12.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1244 2925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

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Samsung M391A1K43BB2-CTD 8GB

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A-DATA Technology DDR4 3200 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMK16GX4M4B3333C16 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

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Corsair CMK32GX4M4B3600C16 8GB

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