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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M3 93T2950EZ3-CCC 1GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M3 93T2950EZ3-CCC 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Samsung M3 93T2950EZ3-CCC 1GB

Samsung M3 93T2950EZ3-CCC 1GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 60
    左右 60% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,234.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6% 更高的带宽
Samsung M3 93T2950EZ3-CCC 1GB 需要考虑的原因
Samsung M3 93T2950EZ3-CCC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M3 93T2950EZ3-CCC 1GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR2
  • PassMark中的延时，ns
    24 left arrow 60
  • 读取速度，GB/s
    16.0 left arrow 3,069.5
  • 写入速度，GB/s
    12.5 left arrow 1,234.6
  • 内存带宽，mbps
    19200 left arrow 3200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 3-3-3-12 / 400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 459

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB

Samsung M3 93T2950EZ3-CCC 1GB RAM的比较

Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Corsair CMR128GX4M8C3000C16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
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