Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M3 93T2950EZ3-CCC 1GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M3 93T2950EZ3-CCC 1GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Samsung M3 93T2950EZ3-CCC 1GB

Samsung M3 93T2950EZ3-CCC 1GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 60

左右 60% 更低的延时
更快的写入速度，GB/s

12.5 1,234.6

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6% 更高的带宽

Samsung M3 93T2950EZ3-CCC 1GB

需要考虑的原因
Samsung M3 93T2950EZ3-CCC 1GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M3 93T2950EZ3-CCC 1GB

主要特点

存储器类型

DDR4 DDR2
PassMark中的延时，ns

24 60
读取速度，GB/s

16.0 3,069.5
写入速度，GB/s

12.5 1,234.6
内存带宽，mbps

19200 3200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 3-3-3-12 / 400 MHz
排名PassMark (越多越好)

2925 459

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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