Samsung M3 93T5750CZA-CE6 2GB vs Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Overall score

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB

Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB

Faster reading speed, GB/s

3 15.1

Average value in the tests

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Reasons to consider
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Below the latency in the PassMark tests, ns

76 77

Around -1% lower latency
Faster write speed, GB/s

7.9 2,622.0

Average value in the tests
Higher memory bandwidth, mbps

21300 5300

Around 4.02 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 93T5750CZA-CE6 2GB

Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

77 76
Read speed, GB/s

3,405.2 15.1
Write speed, GB/s

2,622.0 7.9
Memory bandwidth, mbps

5300 21300

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

763 1859

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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