RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology CT4G4DFS8213.8FA11 4GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Micron Technology CT4G4DFS8213.8FA11 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
15
Average value in the tests
Faster write speed, GB/s
2,622.0
12.0
Average value in the tests
Reasons to consider
Micron Technology CT4G4DFS8213.8FA11 4GB
Report a bug
Below the latency in the PassMark tests, ns
35
77
Around -120% lower latency
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
35
Read speed, GB/s
3,405.2
15.0
Write speed, GB/s
2,622.0
12.0
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
763
2654
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M391A1K43BB2-CTD 8GB
Corsair CMX4GX3M1A1333C9 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
G Skill Intl F4-3000C14-8GVR 8GB
A-DATA Technology DDR2 800G 2GB
Kingston 9905702-010.A00G 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS8G4D240FSB.16FBD? 8GB
Samsung M378B5673FH0-CH9 2GB
Corsair CM4B8G1J3000K16W4 8GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Samsung M471B5673FH0-CF8 2GB
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Panram International Corporation PUD42133C154G2VS 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK64GX4M2A2400C16 32GB
PNY Electronics PNY 2GB
Samsung M378A5143TB2-CTD 4GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.CAGP7.AZ20B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Kingston 99U5584-005.A00LF 4GB
Corsair CMK128GX4M4A2400C16 32GB
Report a bug
×
Bug description
Source link