Samsung M3 93T5750CZA-CE6 2GB vs SK Hynix GKE800UD102408-2400 8GB

Overall score

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Overall score

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

Differences Specifications Comments

Differences

Samsung M3 93T5750CZA-CE6 2GB

Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB

Faster reading speed, GB/s

3 14.4

Average value in the tests
Faster write speed, GB/s

2,622.0 10.4

Average value in the tests

SK Hynix GKE800UD102408-2400 8GB

Reasons to consider
SK Hynix GKE800UD102408-2400 8GB

Below the latency in the PassMark tests, ns

36 77

Around -114% lower latency
Higher memory bandwidth, mbps

19200 5300

Around 3.62 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M3 93T5750CZA-CE6 2GB

SK Hynix GKE800UD102408-2400 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

77 36
Read speed, GB/s

3,405.2 14.4
Write speed, GB/s

2,622.0 10.4
Memory bandwidth, mbps

5300 19200

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

763 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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