RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Compare
Samsung M3 93T5750CZA-CE6 2GB vs Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Overall score
Samsung M3 93T5750CZA-CE6 2GB
Overall score
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 93T5750CZA-CE6 2GB
Report a bug
Faster reading speed, GB/s
3
16.7
Average value in the tests
Faster write speed, GB/s
2,622.0
13.6
Average value in the tests
Reasons to consider
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
77
Around -157% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
30
Read speed, GB/s
3,405.2
16.7
Write speed, GB/s
2,622.0
13.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
763
3447
Samsung M3 93T5750CZA-CE6 2GB RAM comparisons
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston KHX3200C16D4/32GX 32GB
Kingston ACR16D3LS1KBG/8G 8GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston 9905701-011.A00G 16GB
AMD R5316G1609U2K 8GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905624-018.A00G 8GB
Samsung M393B2G70BH0-YK0 16GB
Inmos + 256MB
SK Hynix HYMP112U64CP8-Y5 1GB
Transcend Information JM2666HLB-16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C19-8GSXW 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK32GX4M4E4133C19 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston 9905663-007.A00G 16GB
Samsung M3 78T2863EHS-CF7 1GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Report a bug
×
Bug description
Source link