RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
14.8
Average value in the tests
Faster write speed, GB/s
12.0
8.9
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Report a bug
Below the latency in the PassMark tests, ns
25
33
Around -32% lower latency
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
25
Read speed, GB/s
17.6
14.8
Write speed, GB/s
12.0
8.9
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2910
2542
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology DDR4 2666 8GB
Corsair CMK8GX4M2B3866C18 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW128GX4M4D3000C16 32GB
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4000C18-32GTZR 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX2133C13S4/4G 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX2666C15D4/4G 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Essencore Limited KD48GS481-26N1600 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
G Skill Intl F4-3200C16-8GVGB 8GB
Report a bug
×
Bug description
Source link