RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Panram International Corporation W4U2666PS-8GC19 8GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Panram International Corporation W4U2666PS-8GC19 8GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Panram International Corporation W4U2666PS-8GC19 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
16.1
Average value in the tests
Faster write speed, GB/s
12.0
8.7
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2% higher bandwidth
Reasons to consider
Panram International Corporation W4U2666PS-8GC19 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
33
Around -50% lower latency
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Panram International Corporation W4U2666PS-8GC19 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
22
Read speed, GB/s
17.6
16.1
Write speed, GB/s
12.0
8.7
Memory bandwidth, mbps
25600
21300
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2910
2633
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Panram International Corporation W4U2666PS-8GC19 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3200C16-8GVK 8GB
Avant Technology F6451U64F9333G 4GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-4600C18-8GTRS 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-3733C17-8GTZA 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
Samsung M471B1G73DB0-YK0 8GB
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M393A1G40EB1-CRC 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BL8G26C16S4B.8FD 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3200C15-16GTZR 16GB
SK Hynix HMA851S6CJR6N-XN 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
Mushkin 991988 (996988) 4GB
Kingston KVR26N19D8/16 16GB
Report a bug
×
Bug description
Source link