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Samsung M378A5143TB2-CTD 4GB
SK Hynix HMA41GR7MFR4N-TF 8GB

Samsung M378A5143TB2-CTD 4GB vs SK Hynix HMA41GR7MFR4N-TF 8GB

Overall score
star star star star star
Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Overall score
star star star star star
SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

Differences Specifications Comments

Differences

Samsung M378A5143TB2-CTD 4GB Reasons to consider
Samsung M378A5143TB2-CTD 4GB
Report a bug
  • Faster reading speed, GB/s
    10.3 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 17000
    Around 1.25% higher bandwidth
SK Hynix HMA41GR7MFR4N-TF 8GB Reasons to consider
SK Hynix HMA41GR7MFR4N-TF 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    52 left arrow 76
    Around -46% lower latency
  • Faster write speed, GB/s
    7.5 left arrow 6.9
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378A5143TB2-CTD 4GB
SK Hynix HMA41GR7MFR4N-TF 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    76 left arrow 52
  • Read speed, GB/s
    10.3 left arrow 10.1
  • Write speed, GB/s
    6.9 left arrow 7.5
  • Memory bandwidth, mbps
    21300 left arrow 17000
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1260 left arrow 2176

Samsung M378A5143TB2-CTD 4GB RAM comparisons

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

SK Hynix HMA41GR7MFR4N-TF 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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