RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
Compare
Samsung M378B5173BH0-CH9 4GB vs A-DATA Technology DDR4 2800 2OZ 4GB
Overall score
Samsung M378B5173BH0-CH9 4GB
Overall score
A-DATA Technology DDR4 2800 2OZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173BH0-CH9 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
33
Around 30% lower latency
Reasons to consider
A-DATA Technology DDR4 2800 2OZ 4GB
Report a bug
Faster reading speed, GB/s
16.2
13.4
Average value in the tests
Faster write speed, GB/s
12.2
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
33
Read speed, GB/s
13.4
16.2
Write speed, GB/s
8.0
12.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2269
3026
Samsung M378B5173BH0-CH9 4GB RAM comparisons
Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB
A-DATA Technology DDR4 2800 2OZ 4GB RAM comparisons
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Kingston 99U5474-010.A00LF 2GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Kingston 9905403-038.A00LF 4GB
G Skill Intl F4-3000C15-4GRK 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2400C17-4GNT 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3333C16-8GTZB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
A-DATA Technology AO1P24HC4R1-BUYS 4GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3200C14-16GTZKO 16GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8
Golden Empire CL19-25-25 D4-4000 4GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3000C16-8GTZN 8GB
Kingston 9965516-430.A00G 16GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Apacer Technology 78.CAGR4.DFC0B 8GB
Report a bug
×
Bug description
Source link