RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Compare
Samsung M378B5173BH0-CH9 4GB vs G Skill Intl F4-2800C15-4GVRB 4GB
Overall score
Samsung M378B5173BH0-CH9 4GB
Overall score
G Skill Intl F4-2800C15-4GVRB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173BH0-CH9 4GB
Report a bug
Reasons to consider
G Skill Intl F4-2800C15-4GVRB 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
23
Around -5% lower latency
Faster reading speed, GB/s
17.6
13.4
Average value in the tests
Faster write speed, GB/s
13.3
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
22
Read speed, GB/s
13.4
17.6
Write speed, GB/s
8.0
13.3
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2269
3038
Samsung M378B5173BH0-CH9 4GB RAM comparisons
Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB
G Skill Intl F4-2800C15-4GVRB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273DH0-CK0 4GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
Kingston ACR32D4U2S8HD-8X 8GB
Kingston ACR32D4U2S8HD-8X 8GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C16-8GVRB 8GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Samsung M378B1G73QH0-CK0 8GB
Corsair CMY16GX3M2A1600C9 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CM4B16G4J2400A16K2-O 16GB
Elpida EBE21UE8ACUA-8G-E 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Samsung M378A1K43EB2-CWE 8GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
AMD R5316G1609U2K 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-2400C15-4GVR 4GB
Report a bug
×
Bug description
Source link