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Samsung M378B5173BH0-CH9 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Samsung M378B5173BH0-CH9 4GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Overall score
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Overall score
star star star star star
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Differences Specifications Comments

Differences

Samsung M378B5173BH0-CH9 4GB Reasons to consider
Samsung M378B5173BH0-CH9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    23 left arrow 28
    Around 18% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 12.2
    Average value in the tests
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Report a bug
  • Faster write speed, GB/s
    9.3 left arrow 8.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    23 left arrow 28
  • Read speed, GB/s
    13.4 left arrow 12.2
  • Write speed, GB/s
    8.0 left arrow 9.3
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2269 left arrow 2382

Samsung M378B5173BH0-CH9 4GB RAM comparisons

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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