RAM comparison Samsung M378B5173BH0-CH9 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Samsung M378B5173BH0-CH9 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Overall score

Samsung M378B5173BH0-CH9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378B5173BH0-CH9 4GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Below the latency in the PassMark tests, ns

18 23

Around -28% lower latency
Faster reading speed, GB/s

20.4 13.4

Average value in the tests
Faster write speed, GB/s

17.2 8.0

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

Samsung M378B5173BH0-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2269 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns