RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Compare
Samsung M378B5273CH0-CH9 4GB vs A-DATA Technology DDR4 3000 2OZ 8GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
A-DATA Technology DDR4 3000 2OZ 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
A-DATA Technology DDR4 3000 2OZ 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
37
Around -16% lower latency
Faster reading speed, GB/s
16.9
13.2
Average value in the tests
Faster write speed, GB/s
13.1
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
32
Read speed, GB/s
13.2
16.9
Write speed, GB/s
8.4
13.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2143
3196
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
A-DATA Technology DDR4 3000 2OZ 8GB RAM comparisons
A-DATA Technology AD4S3200316G22-BHYD 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 9ASF51272PZ-2G1A2 4GB
Corsair CMX8GX3M2A2000C9 4GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Samsung M3 78T6553CZ3-CD5 512MB
Corsair CM4B16G2L2666A18K2 16GB
Kingston 99U5474-028.A00LF 4GB
Kingston 9905734-022.A00G 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston KHX2400C15S4/4G 4GB
Apacer Technology 76.C102G.D170B 8GB
Samsung M471A5244CB0-CTD 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Kingston KHX318C10FR/8G 8GB
Corsair CMT128GX4M8X3600C18 16GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMW128GX4M4D3000C16 32GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3000C16-8GSXKB 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Kingston 99U5474-022.A00LF 2GB
Kingston 9965596-002.B00G 4GB
Report a bug
×
Bug description
Source link