RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
Panram International Corporation D4U2666P-8G 8GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Panram International Corporation D4U2666P-8G 8GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Panram International Corporation D4U2666P-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Faster write speed, GB/s
8.4
7.6
Average value in the tests
Reasons to consider
Panram International Corporation D4U2666P-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
37
Around -76% lower latency
Faster reading speed, GB/s
16.2
13.2
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Panram International Corporation D4U2666P-8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
21
Read speed, GB/s
13.2
16.2
Write speed, GB/s
8.4
7.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
2337
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Panram International Corporation D4U2666P-8G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMY8GX3M2A2666C10 4GB
Kingston KHX2666C16S4/16G 16GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX4800C19D4/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Samsung DDR3 8GB 1600MHz 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB
Samsung M378B5273CH0-CH9 4GB
Panram International Corporation D4U2666P-8G 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston MSI21D4S15HAG/8G 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2400C17-16GIS 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD64GX4M4C3000C15 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Samsung M393B1G70BH0-YK0 8GB
Avant Technology W641GU42J5213NC 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Transcend Information TS2GLH64V1B 16GB
Corsair CMX4GX3M2A1600C9 2GB
SK Hynix HMA81GR7MFR8N-UH 8GB
Report a bug
×
Bug description
Source link