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Samsung M378B5273CH0-CH9 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Samsung M378B5273CH0-CH9 4GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Overall score
star star star star star
Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Overall score
star star star star star
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Differences Specifications Comments

Differences

Samsung M378B5273CH0-CH9 4GB Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 72
    Around 49% lower latency
  • Faster write speed, GB/s
    8.4 left arrow 8.0
    Average value in the tests
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB Reasons to consider
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Report a bug
  • Faster reading speed, GB/s
    15.3 left arrow 13.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 72
  • Read speed, GB/s
    13.2 left arrow 15.3
  • Write speed, GB/s
    8.4 left arrow 8.0
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2143 left arrow 1593

Samsung M378B5273CH0-CH9 4GB RAM comparisons

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Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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