RAM comparison Samsung M378B5273CH0-CH9 4GB vs SK Hynix HMA851U6DJR6N-WM 4GB

Samsung M378B5273CH0-CH9 4GB vs SK Hynix HMA851U6DJR6N-WM 4GB

Overall score

Samsung M378B5273CH0-CH9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378B5273CH0-CH9 4GB

Reasons to consider
SK Hynix HMA851U6DJR6N-WM 4GB

Below the latency in the PassMark tests, ns

30 37

Around -23% lower latency
Faster reading speed, GB/s

16.3 13.2

Average value in the tests
Faster write speed, GB/s

12.2 8.4

Average value in the tests
Higher memory bandwidth, mbps

23400 10600

Around 2.21 higher bandwidth

Complete list of technical specifications

Samsung M378B5273CH0-CH9 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)

2143 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns