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Samsung M378B5273DH0-CH9 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Samsung M378B5273DH0-CH9 4GB vs Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Overall score
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Overall score
star star star star star
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Differences Specifications Comments

Differences

Samsung M378B5273DH0-CH9 4GB Reasons to consider
Samsung M378B5273DH0-CH9 4GB
Report a bug
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB Reasons to consider
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 41
    Around -28% lower latency
  • Faster reading speed, GB/s
    15.7 left arrow 13.3
    Average value in the tests
  • Faster write speed, GB/s
    11.0 left arrow 8.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5273DH0-CH9 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 32
  • Read speed, GB/s
    13.3 left arrow 15.7
  • Write speed, GB/s
    8.3 left arrow 11.0
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2176 left arrow 2528

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RAM Latency Calculator
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