RAM comparison Samsung M378B5273DH0-CH9 4GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

Samsung M378B5273DH0-CH9 4GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB

Overall score

Samsung M378B5273DH0-CH9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378B5273DH0-CH9 4GB

Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB

Below the latency in the PassMark tests, ns

38 41

Around -8% lower latency
Faster reading speed, GB/s

14.2 13.3

Average value in the tests
Faster write speed, GB/s

10.3 8.3

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Complete list of technical specifications

Samsung M378B5273DH0-CH9 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2176 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns