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Samsung M378B5273EB0-CK0 4GB
SK Hynix HMT451U6AFR8C-PB 4GB

Samsung M378B5273EB0-CK0 4GB vs SK Hynix HMT451U6AFR8C-PB 4GB

Overall score
star star star star star
Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

Overall score
star star star star star
SK Hynix HMT451U6AFR8C-PB 4GB

SK Hynix HMT451U6AFR8C-PB 4GB

Differences Specifications Comments

Differences

Samsung M378B5273EB0-CK0 4GB Reasons to consider
Samsung M378B5273EB0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 43
    Around 14% lower latency
  • Faster reading speed, GB/s
    14.6 left arrow 13.6
    Average value in the tests
  • Faster write speed, GB/s
    9.6 left arrow 8.1
    Average value in the tests
SK Hynix HMT451U6AFR8C-PB 4GB Reasons to consider
SK Hynix HMT451U6AFR8C-PB 4GB
Report a bug

Specifications

Complete list of technical specifications
Samsung M378B5273EB0-CK0 4GB
SK Hynix HMT451U6AFR8C-PB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    37 left arrow 43
  • Read speed, GB/s
    14.6 left arrow 13.6
  • Write speed, GB/s
    9.6 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2409 left arrow 2169

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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