Samsung M378B5673EH1-CF8 2GB vs Corsair CMD16GX4M4C3200C15 4GB

Overall score

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB

Reasons to consider
Samsung M378B5673EH1-CF8 2GB

Corsair CMD16GX4M4C3200C15 4GB

Reasons to consider
Corsair CMD16GX4M4C3200C15 4GB

Below the latency in the PassMark tests, ns

25 28

Around -12% lower latency
Faster reading speed, GB/s

14.3 12.7

Average value in the tests
Faster write speed, GB/s

12.0 7.5

Average value in the tests
Higher memory bandwidth, mbps

17000 8500

Around 2 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5673EH1-CF8 2GB

Corsair CMD16GX4M4C3200C15 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 25
Read speed, GB/s

12.7 14.3
Write speed, GB/s

7.5 12.0
Memory bandwidth, mbps

8500 17000

Other

Description

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Timings / Clock speed

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

1988 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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