Samsung M378B5673EH1-CF8 2GB vs Lexar Co Limited LD4AU008G-H3200GST 8GB

Overall score

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB

Reasons to consider
Samsung M378B5673EH1-CF8 2GB

Below the latency in the PassMark tests, ns

28 34

Around 18% lower latency

Lexar Co Limited LD4AU008G-H3200GST 8GB

Reasons to consider
Lexar Co Limited LD4AU008G-H3200GST 8GB

Faster reading speed, GB/s

19.9 12.7

Average value in the tests
Faster write speed, GB/s

13.9 7.5

Average value in the tests
Higher memory bandwidth, mbps

25600 8500

Around 3.01 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378B5673EH1-CF8 2GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 34
Read speed, GB/s

12.7 19.9
Write speed, GB/s

7.5 13.9
Memory bandwidth, mbps

8500 25600

Other

Description

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1988 3271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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