RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
31
Around 10% lower latency
Faster reading speed, GB/s
12.7
12.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
Faster write speed, GB/s
9.4
7.5
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
31
Read speed, GB/s
12.7
12.5
Write speed, GB/s
7.5
9.4
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1988
2361
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R538G1601U2S-UO 8GB
Corsair CM4B4G1J2400A14K 4GB
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
A-DATA Technology DQVE1908 512MB
Samsung M393A2G40DBD-CP1???? 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M393A1G40EB1-CRC 8GB
A-DATA Technology AD73I1C1674EV 4GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.C1GMM.AUW0C 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905624-044.A00G 8GB
Kingston 9965525-144.A00LF 8GB
Kingston 9905624-045.A00G 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK64GX4M8Z2933C16 8GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology CB8GU2400.C8ET 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C17-8GTZRB 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK128GX4M8X3600C18 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-2800C16-4GRR 4GB
Report a bug
×
Bug description
Source link