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Samsung M378B5773CH0-CH9 2GB
AMD R744G2606U1S 4GB

Samsung M378B5773CH0-CH9 2GB vs AMD R744G2606U1S 4GB

Overall score
star star star star star
Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Overall score
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Differences Specifications Comments

Differences

Samsung M378B5773CH0-CH9 2GB Reasons to consider
Samsung M378B5773CH0-CH9 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    39 left arrow 76
    Around 49% lower latency
AMD R744G2606U1S 4GB Reasons to consider
AMD R744G2606U1S 4GB
Report a bug
  • Faster reading speed, GB/s
    15.7 left arrow 12.8
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5773CH0-CH9 2GB
AMD R744G2606U1S 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    39 left arrow 76
  • Read speed, GB/s
    12.8 left arrow 15.7
  • Write speed, GB/s
    7.4 left arrow 8.7
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1770 left arrow 1809

Samsung M378B5773CH0-CH9 2GB RAM comparisons

Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB

AMD R744G2606U1S 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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Latest comparisons

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
AMD R744G2606U1S 4GB
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