RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773CH0-CH9 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Compare
Samsung M378B5773CH0-CH9 2GB vs Gloway International (HK) STK4U2400D17161C 16GB
Overall score
Samsung M378B5773CH0-CH9 2GB
Overall score
Gloway International (HK) STK4U2400D17161C 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773CH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
39
67
Around 42% lower latency
Reasons to consider
Gloway International (HK) STK4U2400D17161C 16GB
Report a bug
Faster reading speed, GB/s
15.3
12.8
Average value in the tests
Faster write speed, GB/s
8.2
7.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773CH0-CH9 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
67
Read speed, GB/s
12.8
15.3
Write speed, GB/s
7.4
8.2
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1770
2042
Samsung M378B5773CH0-CH9 2GB RAM comparisons
Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Gloway International (HK) STK4U2400D17161C 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773CH0-CH9 2GB
Gloway International (HK) STK4U2400D17161C 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3200C16-16GTZN 16GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BL8G32C16U4R.8FE 8GB
Kingston 9965525-058.A00LF 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Essencore Limited KD44GU481-26N1600 4GB
Samsung M378B5773CH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Corsair CM2X1024-6400C4 1GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMK32GX4M2Z4000C18 16GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston MSI24D4S7D8MB-16 16GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Report a bug
×
Bug description
Source link