RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
Asgard VML41UG-MIC1U22T1 8GB
Compare
Samsung M378B5773DH0-CH9 2GB vs Asgard VML41UG-MIC1U22T1 8GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
Asgard VML41UG-MIC1U22T1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
39
65
Around 40% lower latency
Reasons to consider
Asgard VML41UG-MIC1U22T1 8GB
Report a bug
Faster reading speed, GB/s
16.4
11.7
Average value in the tests
Faster write speed, GB/s
8.4
7.2
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Asgard VML41UG-MIC1U22T1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
65
Read speed, GB/s
11.7
16.4
Write speed, GB/s
7.2
8.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1749
2041
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Asgard VML41UG-MIC1U22T1 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905702-008.A00G 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2133C15-8GRR2 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston KMKYF9-MIB 8GB
A-DATA Technology DDR4 2400 16GB
Kingston MSI26D4S9S8ME-8 8GB
Samsung 1600 CL10 Series 8GB
V-Color Technology Inc. TA48G36S818BNK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Dust Leopard DDR4-2400 C16 8GB 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Corsair CMX8GX3M2A2000C9 4GB
Kingston MSI24D4U7S8MB-8 8GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston HP24D4S7S8MBP-8 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KF2666C15S4/16G 16GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CM4X4GD3000C16K2 4GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFD8266 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
×
Bug description
Source link