RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Samsung M378B5773DH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Faster reading speed, GB/s
11.7
9.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
37
39
Around -5% lower latency
Faster write speed, GB/s
7.7
7.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
37
Read speed, GB/s
11.7
9.5
Write speed, GB/s
7.2
7.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1749
1949
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Samsung M378B5773DH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9965684-013.A00G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965640-006.A01G 32GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-4400C19-32GTRS 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMV8GX4M1A2666C18 8GB
Samsung M393A1G40DB0-CPB 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Elpida EBE21UE8ACUA-8G-E 2GB
A-DATA Technology DDR4 4133 2OZ 8GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology BL8G26C16U4W.8FD 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMR16GX4M2D3000C16 8GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C16-8GSXFB 8GB
Kingston KP4T2F-PSB 4GB
Corsair CM4X16GE2666C16K4 16GB
Report a bug
×
Bug description
Source link