Samsung M378B5773DH0-CH9 2GB
Micron Technology 9ASF51272AZ-2G3B1 4GB

Samsung M378B5773DH0-CH9 2GB vs Micron Technology 9ASF51272AZ-2G3B1 4GB

Overall score
star star star star star
Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Overall score
star star star star star
Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Differences

  • Below the latency in the PassMark tests, ns
    29 left arrow 39
    Around -34% lower latency
  • Faster reading speed, GB/s
    15.4 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    13.0 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    39 left arrow 29
  • Read speed, GB/s
    11.7 left arrow 15.4
  • Write speed, GB/s
    7.2 left arrow 13.0
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1749 left arrow 2854
RAM Latency Calculator
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