Samsung M378T5663QZ3-CF7 2GB vs OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Overall score

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Overall score

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Differences Specifications Comments

Differences

Samsung M378T5663QZ3-CF7 2GB

Reasons to consider
Samsung M378T5663QZ3-CF7 2GB

Faster reading speed, GB/s

4 17.4

Average value in the tests

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Reasons to consider
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Below the latency in the PassMark tests, ns

27 56

Around -107% lower latency
Faster write speed, GB/s

14.5 1,813.5

Average value in the tests
Higher memory bandwidth, mbps

25600 6400

Around 4 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M378T5663QZ3-CF7 2GB

OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

56 27
Read speed, GB/s

4,387.7 17.4
Write speed, GB/s

1,813.5 14.5
Memory bandwidth, mbps

6400 25600

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

693 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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