RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M386B4G70DM0-CMA4 32GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Compare
Samsung M386B4G70DM0-CMA4 32GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Overall score
Samsung M386B4G70DM0-CMA4 32GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M386B4G70DM0-CMA4 32GB
Report a bug
Below the latency in the PassMark tests, ns
52
72
Around 28% lower latency
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Report a bug
Faster reading speed, GB/s
15.3
9.7
Average value in the tests
Faster write speed, GB/s
8.0
7.2
Average value in the tests
Higher memory bandwidth, mbps
19200
14900
Around 1.29 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M386B4G70DM0-CMA4 32GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
52
72
Read speed, GB/s
9.7
15.3
Write speed, GB/s
7.2
8.0
Memory bandwidth, mbps
14900
19200
Other
Description
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
Timings / Clock speed
9-10-9-28 / 1866 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2173
1817
Samsung M386B4G70DM0-CMA4 32GB RAM comparisons
Team Group Inc. Dark-1866 4GB
Mushkin 994104 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT8G4DFS824A.M8FD 8GB
PNY Electronics PNY 2GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Corsair CMD32GX4M4B3866C18 8GB
Corsair CMD16GX3M2A1866C9 8GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 16G2666CL19 16GB
Kingston KVR533D2N4 512MB
Samsung M471A5143EB0-CPB 4GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-4000C19-16GTRG 16GB
Samsung M393B1G70QH0-YK0 8GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Kingston 9965525-018.A00LF 4GB
V-Color Technology Inc. TL48G36S8KBNRGB18 8GB
Hexon Technology Pte Ltd HEXON 1GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMR32GX4M2F3600C18 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Transcend Information TS1GLH72V1H 8GB
Kingston HP16D3LS1KBGH/4G 4GB
G Skill Intl F4-4000C18-16GTRG 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Report a bug
×
Bug description
Source link